| PART |
Description |
Maker |
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| STC03DE170 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm
From old datasheet system
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1700 V - 3 A - 0.55 Ohm
|
意法半导
STMicroelectronics
ST Microelectronics
|
| STP12IE90F4 |
Emitter Switched Bipolar Transistor
|
ST Microelectronics
|
| STP12IE95F4 |
Emitter Switched Bipolar Transistor
|
ST Microelectronics
|
| STP08IE120F4 P08IE120F4 |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC03DE170HV |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 OHM
|
意法半导
STMicroelectronics
|
| STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm
|
ST Microelectronics
|
| MC33318DW MC33318P |
Voice switched Speakerphone circuit Bipolar analog
|
Motorola, Inc.
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| AT-38086-TR1 AT-38086-BLK AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
